p-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. pin description ordering and marking information features applications ? power management in notebook computer, portable equipment and battery powered systems so ? 8 ? -30v/-6a, r ds(on) = 32m ? (typ.) @ v gs = -10v r ds(on) = 50m ? (typ.) @ v gs = -4.5v ? ? ? ? ? super high density cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? so-8 package symbol parameter rating unit v dss drain-source voltage -30 v gss gate-source voltage 20 v i d * maximum drain current ? continuous t a = 25 c -6 i dm maximum drain current ? pulsed -30 a * surface mounted on fr4 board, t 10 sec. absolute maximum ratings (t a = 25 c unless otherwise noted) 1 2 3 45 6 7 8 s s s gd d d d p-channel mosfet g d s s s ddd apm4431 handling code temp. range package code package code k : so -8 operation junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel apm4431 k : apm4431 xxxxx xxxxx - date code
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 2 symbol parameter rating unit t a = 25 c 2.5 p d maximum power dissipation t a = 100 c 1.0 w t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c r ja thermal resistance - junction to ambient 50 c/w * surface mounted on fr4 board, t 10 sec. electrical characteristics (t a =25c unless otherwise noted) absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) apm4431 symbol parameter test condition min. typ a . max. unit static bv dss drain-source breakdown voltage v gs =0v, i d = -250 a -30 v i dss zero gate voltage drain current v ds = -24v, v gs =0v -1 a v gs(th) gate threshold voltage v ds =v gs , i d = -250 a -1 -3 v i gss gate leakage current v gs = 20v , v ds =0v 100 na v gs = -10v, i d = -5.3a 32 40 r ds(on) drain-source on-state resistance b v gs = -4.5v, i d = -2a 50 60 m ? v sd diode forward voltage b i sd = -2.3a, v gs =0v -0.6 -1.3 v dynamic a q g total gate charge 27 35 q gs gate-source charge 5 q gd gate-drain charge v ds = -15v, v gs = -10v, i d = -3a 4.1 nc t d(on) turn-on delay time 12 22 t r turn-on rise time 15 22 t d(off) turn-off delay time 35 58 t f turn-off fall time v dd = -15v, i d = -2a, v gen = -10v, r g =6 ? r l =7.5 ? 15 30 ns c iss input capacitance 1450 c oss output capacitance 225 c rss reverse transfer capacitance v gs =0v, v ds =-25v frequency = 1.0mhz 150 pf notes a : guaranteed by design, not subject to production testing b : pulse test ; pulse width 500 s, duty cycle 2%
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 3 0 5 10 15 20 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 012345 0 5 10 15 20 25 30 0246810 0 5 10 15 20 25 30 typical characteristics t j =-55c t j =25c t j =125c -i d- drain current (a) transfer characteristics -v gs - gate-to-source voltage (v) threshold voltage vs. junction temperature tj - junction temperature (c) -v gs(th)- threshold voltage (v) (normalized) on-resistance vs. drain current -v gs =4.5v -i d - drain current (a) -v gs =10v r ds(on) -on-resistance ( ? ) -i ds =250 a output characteristics -i d -drain current (a) -v ds - drain-to-source voltage (v) -v gs =3v -v gs =5,6,7,8,9,10v -v gs =4v
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 4 2345678910 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0 5 10 15 20 25 30 0 300 600 900 1200 1500 1800 2100 0 5 10 15 20 25 30 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 typical characteristics -v gs - gate-to-source voltage (v) r ds(on) -on-resistance ( ? ) on-resistance vs. gate-to-source voltage -i d =5.3a r ds(on) -on-resistance ( ? ) (normalized) on-resistance vs. junction temperature t j - junction temperature (c) -v gs =10v -i d =5.3a -v ds - drain-to-source voltage (v) capacitance capacitance (pf) gate charge q g - gate charge (nc) -v gs -gate-source voltage (v) -v d =15v -i d =3a ciss coss crss frequency=1mhz
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 5 0.01 0.1 1 10 0 10 20 30 40 50 30 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 30 typical characteristics single pulse power time (sec) square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction to ambient d= 0.02 duty cycle = 0.5 d= 0.2 d= 0.1 d= 0.05 single pulse 1.duty cycle, d=t1/t2 2.per unit base=r thja =50c/w 3.t jm -t a =p dm z thja 4.surface mounted power (w) source-drain diode forward voltage -v sd -source-to-drain voltage (v ) -i s -source current ( ) t j =150c t j =25c
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 6 millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) packaging information
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 7 reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ?20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215-219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3.
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 8 carrier tape & reel dimensions application a b c j t1 t2 w p e 330 1 62 +1.5 12.75+ 0.15 2 0.5 12.4 0.2 2 0.2 12 0. 3 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop- 8 5.5 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0. 1 2.1 0.1 0.3 0.013 a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program
copyright ? anpec electronics corp. rev. a.1 - aug., 2002 apm4431 www.anpec.com.tw 9 customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions application carrier width cover tape width devices per reel sop- 8 12 9.3 2500
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